Thermal Management of Gallium Nitride Electronics Book

Thermal Management of Gallium Nitride Electronics

  • Author : Marko Tadjer
  • Publisher : Woodhead Publishing
  • Release Date : 2022-07-15
  • Genre: Technology & Engineering
  • Pages : 560
  • ISBN 10 : 9780128211052
  • Total Read : 73
  • File Size : 9,8 Mb

Thermal Management of Gallium Nitride Electronics Summary:

Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics

Gallium Nitride Electronics Book

Gallium Nitride Electronics

  • Author : Rüdiger Quay
  • Publisher : Springer Science & Business Media
  • Release Date : 2008-04-05
  • Genre: Technology & Engineering
  • Pages : 470
  • ISBN 10 : 9783540718925
  • Total Read : 69
  • File Size : 9,5 Mb

Gallium Nitride Electronics Summary:

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications Book

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

  • Author : Bobby Logan Hancock
  • Publisher : Unknown
  • Release Date : 2016
  • Genre: Electronics
  • Pages : 294
  • ISBN 10 : OCLC:1018473593
  • Total Read : 62
  • File Size : 18,5 Mb

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications Summary:

As trends progress toward higher power applications in GaN-based electronic and photonic devices, the issue of self-heating becomes a prominent concern. This is especially the case for high-brightness light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs), where the bulk of power dissipation occurs within a small (sub-micron) region resulting in highly localized temperature rises during operation. Monitoring these thermal effects becomes critical as they significantly affect performance, reliability, and overall device lifetime. In response to these issues, diamond grown by chemical vapor deposition (CVD) has emerged as a promising material in III-nitride thermal management as a heat-spreading substrate due to its exceptional thermal conductivity. This work is aimed toward the characterization of self-heating and thermal management technologies in GaN electronic and photonic devices and their materials. The two main components of this dissertation include assessing self-heating in these devices through direct measurement of temperature rises in high-power LEDs and GaN HEMTs and qualifying thermal management approaches through the characterization of thermal conductivity and material quality in CVD diamond and its incorporation into GaN device layers. The purpose of this work is to further the understanding of thermal effects in III-nitride materials as well as provide useful contributions to the development of future thermal management technologies in GaN device applications.

Device level Thermal Analysis of Gallium Nitride based Electronics Book

Device level Thermal Analysis of Gallium Nitride based Electronics

  • Author : Kevin Robert Bagnall
  • Publisher : Unknown
  • Release Date : 2013
  • Genre: Uncategoriezed
  • Pages : 119
  • ISBN 10 : OCLC:858862774
  • Total Read : 96
  • File Size : 19,8 Mb

Device level Thermal Analysis of Gallium Nitride based Electronics Summary:

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys (high critical electric field, carrier concentration, and carrier mobility) have enabled record-breaking performance of GaN-based high electron mobility transistors (HEMTs) for radio-frequency (RF) applications. However, the very high power density in the active region of GaN HEMTs leads to significant degradation in performance as the device temperature increases. Thus, effective thermal management of GaN-based electronics is a key to enabling the technology to reach its full potential. Despite the vast amount of research into thermal issues in GaN-based electronics, including both modeling and experimental studies, there are a number of poorly understood issues. For instance, the heat source distribution in GaN HEMTs for RF applications has not been quantified nor have metrics been published for the heat flux in the near-junction region. Often, device engineers neglect the importance of thermal boundary conditions, which play a major role in shaping the temperature distribution in the device. Temperature rise in GaN HEMTs is typically modeled using computationally expensive numerical methods; analytical methods that are more computationally efficient are often quite limited. In this thesis, a literature review is given that discusses previous research in thermal issues in GaN-based electronics and that provides a perspective on the important factors to consider for thermal management. Electro-thermal modeling tools validated with test devices were used to derive quantitative information about the heat source distribution in GaN HEMTs. Both numerical and analytical thermal models were developed that provide helpful insight into the dominant factors in the formation of highly localized hotspots in the near-junction region. The Kirchhoff transformat

Gallium Nitride  GaN  Book

Gallium Nitride GaN

  • Author : Farid Medjdoub
  • Publisher : CRC Press
  • Release Date : 2017-12-19
  • Genre: Technology & Engineering
  • Pages : 372
  • ISBN 10 : 9781482220049
  • Total Read : 81
  • File Size : 9,5 Mb

Gallium Nitride GaN Summary:

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall ass

Gallium Nitride Power Devices Book

Gallium Nitride Power Devices

  • Author : Hongyu Yu
  • Publisher : CRC Press
  • Release Date : 2017-07-06
  • Genre: Science
  • Pages : 292
  • ISBN 10 : 9781351767606
  • Total Read : 88
  • File Size : 17,9 Mb

Gallium Nitride Power Devices Summary:

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

III Nitride Electronic Devices Book

III Nitride Electronic Devices

  • Author : Rongming Chu
  • Publisher : Academic Press
  • Release Date : 2019-10
  • Genre: Electronic apparatus and appliances
  • Pages : 422
  • ISBN 10 : 9780128175446
  • Total Read : 74
  • File Size : 12,9 Mb

III Nitride Electronic Devices Summary:

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field