Ferroelectricity in Doped Hafnium Oxide Book

Ferroelectricity in Doped Hafnium Oxide


  • Author : Uwe Schroeder
  • Publisher : Woodhead Publishing
  • Release Date : 2019-03-27
  • Genre: Technology & Engineering
  • Pages : 570
  • ISBN 10 : 9780081024317
  • Total Read : 59
  • File Size : 16,9 Mb

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Ferroelectricity in Doped Hafnium Oxide Summary:

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials Book

Negative Capacitance in Ferroelectric Materials


  • Author : Michael Hoffmann
  • Publisher : BoD – Books on Demand
  • Release Date : 2020-09-15
  • Genre: Technology & Engineering
  • Pages : 170
  • ISBN 10 : 9783751999366
  • Total Read : 80
  • File Size : 8,9 Mb

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Negative Capacitance in Ferroelectric Materials Summary:

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors Book

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors


  • Author : Evelyn Tina Breyer
  • Publisher : BoD – Books on Demand
  • Release Date : 2022-02-08
  • Genre: Technology & Engineering
  • Pages : 214
  • ISBN 10 : 9783755708520
  • Total Read : 62
  • File Size : 9,8 Mb

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Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors Summary:

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Ferroelectric Gate Field Effect Transistor Memories Book

Ferroelectric Gate Field Effect Transistor Memories


  • Author : Byung-Eun Park
  • Publisher : Springer Nature
  • Release Date : 2020-03-23
  • Genre: Technology & Engineering
  • Pages : 425
  • ISBN 10 : 9789811512124
  • Total Read : 59
  • File Size : 12,9 Mb

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Ferroelectric Gate Field Effect Transistor Memories Summary:

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Memristive Devices for Brain Inspired Computing Book

Memristive Devices for Brain Inspired Computing


  • Author : Sabina Spiga
  • Publisher : Woodhead Publishing
  • Release Date : 2020-06-12
  • Genre: Technology & Engineering
  • Pages : 564
  • ISBN 10 : 9780081027875
  • Total Read : 92
  • File Size : 15,8 Mb

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Memristive Devices for Brain Inspired Computing Summary:

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Solid State Chemistry and its Applications Book

Solid State Chemistry and its Applications


  • Author : Anthony R. West
  • Publisher : John Wiley & Sons
  • Release Date : 2022-04-06
  • Genre: Science
  • Pages : 896
  • ISBN 10 : 9781118695579
  • Total Read : 70
  • File Size : 5,6 Mb

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Solid State Chemistry and its Applications Summary:

SOLID STATE CHEMISTRY AND ITS APPLICATIONS A comprehensive treatment of solid state chemistry complete with supplementary material and full colour illustrations from a leading expert in the field. Solid State Chemistry and its Applications, Second Edition delivers an advanced version of West’s classic text in solid state chemistry, expanding on the undergraduate Student Edition to present a comprehensive treatment of solid state chemistry suitable for advanced students and researchers. The book provides the reader with an up-to-date account of essential topics in solid state chemistry and recent developments in this rapidly developing field of inorganic chemistry. Significant updates and new content in this second edition include: A more extensive overview of important families of inorganic solids including spinels, perovskites, pyrochlores, garnets, Ruddlesden-Popper phases and many more New methods to synthesise inorganic solids, including sol-gel methods, combustion synthesis, atomic layer deposition, spray pyrolysis and microwave techniques Advances in electron microscopy, X-ray and electron spectroscopies New developments in electrical properties of materials, including high Tc superconductivity, lithium batteries, solid oxide fuel cells and smart windows Recent developments in optical properties, including fibre optics, solar cells and transparent conducting oxides Advances in magnetic properties including magnetoresistance and multiferroic materials Homogeneous and heterogeneous ceramics, characterization using impedance spectroscopy Thermoelectric materials, MXenes, low dimensional structures, memristors and many other functional materials Expanded coverage of glass, including metallic and fluoride glasses, cement and concrete, geopolymers, refractories and structural ceramics Overview of binary oxides of all the elements, their structures, properties and applications Featuring full color illustrations throughout, readers will also benefit from online supp

Intelligent Circuits and Systems Book

Intelligent Circuits and Systems


  • Author : Rajesh Singh
  • Publisher : CRC Press
  • Release Date : 2021-08-01
  • Genre: Technology & Engineering
  • Pages : 636
  • ISBN 10 : 9781000404890
  • Total Read : 93
  • File Size : 10,6 Mb

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Intelligent Circuits and Systems Summary:

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society. This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering.

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Book

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics


  • Author : D. Nirmal
  • Publisher : CRC Press
  • Release Date : 2021-12-10
  • Genre: Technology & Engineering
  • Pages : 302
  • ISBN 10 : 9781000475364
  • Total Read : 72
  • File Size : 19,9 Mb

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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Summary:

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.